Phosphorous doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization

A low-temperature electron spin resonance study has been carried out on large-area high-purity polycrystalline two-dimensional few monolayer (ML) 2H MoS2 films synthesized by sulfurization of Mo layers, with intent to atomically assess mobility-degrading detrimental point defects. This reveals the presence of a distinct previously unreported anisotropic defect of axial symmetry about the c-axis...

Rhenium-doped MoS2 films

Polycrystalline indium-doped ZnO thin films: preparation and characterization

Zinc oxide (ZnO) and indium-doped zinc oxide (IZO) thin films have been deposited onto glass substrates by the spray pyrolysis method. The variations of the structural, electrical and optical properties with the indium incorporation were investigated. The crystal structure and orientation of the ZnO and IZO thin films were investigated by XRD patterns. All the deposited films are polycrystallin...

Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization.

Atomically thin molybdenum disulfide (MoS(2)) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS(2) atomic thin layers is still lacking. Here we report that waf...

Water-enhanced negative bias temperature instability in p-type low temperature polycrystalline silicon thin film transistors

Water-enhanced degradation of p-type low temperature polycrystalline silicon thin film transistors under negative bias temperature (NBT) condition is studied. H2O penetration into gate oxide network and the role of H2O during NBT stress are confirmed and clarified respectively. To prevent H2O diffusion, a combination of a layer of PECVD SiO2 and a layer of PECVD Si3N4 as passivation layers are ...